Phase Formations and Electrical properties of Various (Bi,La)₄ Ti₃O₁₂ Thin Films by Sol-gel method

Phase Formations and Electrical properties of Various (Bi,La)₄ Ti₃O₁₂ Thin Films by Sol-gel method

The phase formation and electrical properties of various (Bi,La)₄Tb012 (BLT) thin film and V-, Sm-doped BLT thin films prepared by the chemical solution deposition method on platinized Si substrates have been investigated. It was observed that the microstructure and electrical properties of BLT thin f1lms dramatically varied with annealing temperature and V, Sm-doping. The crystallinity and grain size of BL T thin films were definitely increased by VSm-doping into BL T fIlms, which resulted in the enhancement of remanent polarization in doped BLT films. The remanent polarization (Pr) of Sm-doped BLT f1lms annealed for 3min by an RTA system was about 9μC/cm² The V- and Sm-doped BLT films also exhibited good fatigue characteristics under bipolar stressing to 1010 cycles.