학술저널
ZnS<SUB>0.24</SUB>Se<SUB>0.76</SUB>의 photoreflectance 특성 연구
Study of the characteristic of ZnS<SUB>0.24</SUB>Se<SUB>0.76</SUB>/GaAs heterostructure by photoreflectance
- 한국레이저가공학회
- 한국레이저가공학회지
- 한국레이저가공학회지 제7권 제3호
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2004.1247 - 50 (4 pages)
- 29
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In this research, we investigated the characteristic of ZnS<SUB>0.24</SUB>Se<SUB>0.76</SUB>/GaAs heterostructure by using photoreflectance sprctroscopy(PR). The oscillations observed above the 1.43 eV range were attributed Franze-Keldysh effect. The interface electric filed of GaAs/ZnS<SUB>0.24</SUB>Se<SUB>0.76</SUB> is 2.153×104 V/㎝.
Abstract<BR>1. 서론<BR>2. 실험<BR>3. 결과 및 논의<BR>4. 결론<BR>참고문헌<BR>
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