상세검색
최근 검색어 전체 삭제
다국어입력
즐겨찾기0
학술대회자료

실리콘 박막이 레이저 가공 시 발생하는 광기계적 손상 해석

Analysis of Photomechanical Damages in Laser Drilling of Thin Silicon Wafer

  • 73
100900.jpg

Photomechanical damages of single-crystal silicon under 6 ns laser pulse (Nd:YAG) ablation at intensities of 1~20 GW/㎠ are studied through the scanning electron microscope investigation of the ablated samples and numerical simulations simultaneously. The effects of various parameters (beam size, irradiance, sample thickness, and crater shape) were investigated by using numerical model which is developed in this work considering the recoil pressure and the surface evaporation.

(0)

(0)

로딩중