실리콘 박막이 레이저 가공 시 발생하는 광기계적 손상 해석

Analysis of Photomechanical Damages in Laser Drilling of Thin Silicon Wafer

Photomechanical damages of single-crystal silicon under 6 ns laser pulse (Nd:YAG) ablation at intensities of 1~20 GW/㎠ are studied through the scanning electron microscope investigation of the ablated samples and numerical simulations simultaneously. The effects of various parameters (beam size, irradiance, sample thickness, and crater shape) were investigated by using numerical model which is developed in this work considering the recoil pressure and the surface evaporation.

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