고밀도 플라즈마에 의한 Y₂O₃박막의 식각 메커니즘 연구

Etch Mechanism of Y₂O₃ Thin Films in High Density Plasma

In this study, Y₂O₃ thin films were etched with inductively coupled plasma (ICP). The etch rate of Y₂O₃, and the selectivity of Y₂O₃ to YMnO₃ were investigated by varying Cl₂/(Cl₂+Ar) gas mixing ratio. The maximum etch rate of Y₂O₃, and the selectivity of Y₂O₃ to YMnO₃ were 302/min, and 2.4 at Cl₂/(Cl₂+Ar) gas mixing ratio of 0.2 repectively. In x-ray photoelectron spectroscopy (XPS) analysis, Y₂O₃ thin film was dominantly etched by Ar ion bombardment, and was assisted by chemical reaction of Cl radical. These results were confirmed by secondary ion mass spectroscopy(SIMS) analysis. YCI, and YCl₃ existed at 126.03 a.m.u, and 192.3 a.m.u, respectively