학술대회자료
분자선 에피탁시법으로 성장한 Te 도핑된 GaSb 박막의 전기적 특성
Electrical transport properties of GaSb:Te films grown by Molecular Beam Epitaxy
- 한국항해항만학회
- 한국항해항만학회 학술대회논문집
- 2008년도 공동학술대회 지구환경변화와 해양산업의 전망 논문집
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2008.06331 - 333 (3 pages)
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The electrical properties of GaSb films were investigated. Electrical properties were measured by Hal1 measurements with Van der Pauw configuration and performed in the temperature range from 10 to 300K. Te doped GaSb layers (with/without ZnTe buffer) were grown by molecular beam epitaxy. The experimental results are compared to the theory, Brooks-Herring scattering theory, based on the two-layer Hal1 effect model. We considered the four major scattering mechanisms effects. The role of ZnTe buffer to the electrical properties is discussed.
Abstract
1. Introduction
2. Experiment
3. Result & Discussion
4. Conclusion
References
Acknowledgement
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