Pt 나노입자와 Hybrid Pt-SiO2 나노입자의 합성과 활용 및 입자박막 제어
Synthesis and application of Pt and hybrid Pt-SiO2 nanoparticles and control of particles layer thickness
- 한국전자통신학회
- 한국전자통신학회 논문지
- 제4권 제4호
-
2009.08301 - 305 (5 pages)
- 16
Pt 나노입자의 합성과 이를 이용한 hybrid Pt-SiO2 나노입자의 합성을 성공적으로 수행하였으며, self-assembled Pt nanoparticles monolayer를 charge trapping layer로 활용하는 metal-oxide-semiconductor(MOS) type memory의 한 예로 non-volatile memory(NVM)의 응용을 보임으로써 나노입자의 활용 가능성을 보이고, 또한, hybrid Pt-SiO2 나노입자 박막 층의 제어를 통한 MOS type memory device에의 보다 더 넓은 활용 가능성을 보이고자 하였다.
Pt nanoparticles with a narrow size distribution (dia. ~4 nm) were synthesized via an alcohol reduction method and used for the fabrication of hybrid Pt-SiO2 nanoparticles. Also, the self-assembled monolayer of Pt nanoparticles (NPs) was studied as a charge trapping layer for non-volatile memory (NVM) applications. A metal-oxide-semiconductor (MOS) type memory device with Pt NPs exhibits a relatively large memory window. These results indicate that the self-assembled Pt NPs can be utilized for NVM devices. In addition, it was tried to show the control of thin-film thickness of hybrid Pt-SiO2 nanoparticles indicating the possibility of much applications for the MOS type memory devices.
Ⅰ. 서 론
Ⅱ. 본 론
Ⅲ. 결 론
참고 문헌
(0)
(0)