학술저널
실리콘의 펠티에 효과에 對한 硏究
A Study on the peltier effect of si-Semiconductor
- 호서대학교 사회과학연구소
- 사회과학연구
- 제4집 제1호
-
1985.12397 - 401 (5 pages)
- 11
Being that the melting point of silicon is 1800 J/gr, in this paper it is interested that Si-Semiconductors will be worth using of Peltier effect. For attachment of semiconductor chips, a cure schedule of 2 hours at 200°C has been found to yield a stable and reliable. In the results, it is a semi-permant element and using with a heating element the temperature is up to 200°C over. At the end, it will be possible to improve an excellent elements with a way.
ABSTRACT
1. 序論
2. 基本原理
3. 素子의 製作
4. 實驗 및 檢討
5. 結論
參考文獻
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