Eicosanoic Acid Langmuir-Blodgett(LB) 박막을 이용한 분자 다이오드의 전기적 특성

Electrical Properties of Molecular Diode Using Eicosanoic Acid Langmuir-Blodgett(LB) Monolayer Film

Electron transfer through an Langmuir-Blodgett(LB) monolayer film sandwiched between metal electrodes. We used an eicosanoic acid material and the material was very famous as a thin film insulating material. Eicosanoic acid monolayer was deposited by Langmuir-Blodgett(LB) technique and a subphase was a CdCl2 solution as a 2{times}10^{-4} mol/L. Also we used a bottom electrode as an Al/Al2O3 and a top electrode as a Al and Ti/Al. Here, the Al2O3 on the bottom electrode was deposited by thermal evaporation method. The Al2O3 layer was acted on a tunneling barrier and insulating layer in tunnel diode. It was found that the proper transfer surface pressure for film deposition was 25 mN/m and the limiting area per molecule was about 24 {AA}^2/molecule. When the positive and negative bias applied to the molecular device, the behavior shows that a tunnel switching characteristics. This result were analyzed regarding various mechanisms.