학술저널
Deep UV Photoresists;Dissolution Inhibitor
- 한국응용과학기술학회 (구.한국유화학회)
- 한국응용과학기술학회지
- 한국유화학회지 제17권 제3호
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2000.09188 - 191 (4 pages)
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A new class of deep UV Photoresist based on the principles of chemical amplification was developed. This photoresist consists of three basic elements: a copolymer, blocked tetrabromobisphenol-A as a dissolution inhibitor and a photosensitive onium salt as a photoacid generator. On irradiation followed by a post exposure bake, tert-butoxycarbonyloxy phenyl group is converted to phenol group. Thus the initially base insoluble resin is converted under UV irradiation to a base soluble resin which may be preferentially removed by dissolution. This new photoresist display high sensitivity, 10mJ/cm².
Abstract
1. INTRODUCTION
2. EXPERIMENTAL
3. RESULTS AND DISCUSSION
4. CONCLUSIONS
REFERENCES
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