학술저널
A Study on the F a b ric a tio n of AIN T hin Films by CVD u s in g a lu m in u m a lk y l precursor
A Study on the F a b ric a tio n of AIN T hin Films by CVD u s in g a lu m in u m a lk y l precursor
- 호서대학교 공업기술연구소
- 공업기술연구 논문집
- 제32권 제1호
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2013.061 - 6 (6 pages)
- 2
AIN films were prepared by CVD using aluminum alkyl ((CH3)3A1) precursor in an horizontal hot-wall type reactor. AIN films of different crystalline quality were obtained at TdeP=813-1023 K and P tot=1.99 kPa. A IN films of 2 um thickness can be grown highly oriented on amorphous quartz substrates. Thicker AIN films exhibit a polycrystalline nature. The AIN films of 0.1-0.2 pm thickness were transparent and their refractive indexes were about 1.5-1.9.
I. INTRODUCTION
II. EXPERIMENTAL PROCEDURES
III. RESULTS AND DISCUSSION
IV. CONCLUSION
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