알루미늄화합물을 이용한 고온 • 대전력용 SiC MIS 소자에 관한 연구

A s tudy on the SiC MIS devices for high temperature and high power applications using aluminum compound

In this paper, we propose aluminum oxide (and nitride) thin nlm as gate insulating material instead of Si02 on 6H&#8212;Si し MIS devices. The fabrication of aluminium oxide (and nitride) films directly on 6H_SiC(0001) substrates by reactive magnetron sputtering method. Well-behaved C - V characteristics were obtained measured in MIS capacitors structures. The dielectric constant of aluminum nitride films was obtained as around 8.4. Also, the gate leakage current density of the MIS capacitor was 10 ^ A/cm&#4354; order within the electric field of 2 MV/cm. The amount of Du was evaluated as about 5><1010 eV cm at a location of 0.5 eV from the midgap. These results indicate that the interface property of this structure is enough quality to MIS devices applications.