기판온도에 따른 수소화된 나노크리스탈 실리콘 박막의 구조적 광학적 특성 분석

A Study of Structural and Optical Features of Nc-Si:H Thin Films using Substrate Temperatures

In this study, nanostructural and optical features of the hydrogenated nanocrystalline silicon were investigated by substrate temperatures. Especially, nanostructure of the silicon was reacted sensitively by controlling the variables. Features of the thin film were changed by substrate temperatures. Nc-Si:H thin films were deposited by PECVD technique. Nanostructural and optical features of the thin films were measured by controlling of the substrate temperature during the deposition. The sample deposited under room temperature contained several nanocrystallites. As substrate temperature rises from room temperature to 600℃, crystallites size was increased from 1nm to 6nm and the crystalline volume fraction was increased. During the deposition, nucleation growth was accelerated by increasing the thermodynamic energy in the films. As a result, ~390nm thickness film at 200℃ substrate temperature showed ~420nm thickness at 600℃. This change had a effected on transmittance in the visible light region. And the band gap of the films were changed from 1.7eV at room temperature to 1.4eV at 600℃.