Ge-Se 2성분계 박막매질의 ReRAM 적용을 위한 전기적 특성 평가

The Electric Properties Evaluation of Ge-Se Thin-Film Materials Application for ReRAM

In this study, we studied the nature of thin films formed by photodoping chalcogenide materials with for use in programmable metallization cell devices, a type of ReRAM. We investigated the nature of thin films formed by photo doping of Ag ions into chalcogenide materials for use in solid electrolyte of programmable metallization cell devices. We were able to do 3 compositions of Ge-Se compositions for understanding of switching properties with Ge-Se complex-ratio. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from chalcogenide materials.