학술저널
RTMOCVD법에 의해 제조된 Ta₂O₅ 박막의 특성
Characteristics of TA₂O₅ thin film prepared by RTMOCVD
- 강원대학교 산업기술연구소
- 산업기술연구
- vol.19
-
1999.091 - 5 (5 pages)
- 0
Ultra thin Ta₂O₅ gate dielectrics were prepared by RTMOCVD (rapid thermal metal organic chemical vapor deposition) using Ta source TaC₁₂H₃₀O₅N and O₂ gaseous mixtures. As a result, Ta₂O₅ thin films showed significantly low leakage current compared to SiO₂ of identical thickness, which was due to the stabilization of the interfacial layer by NO (SiOxNy) passivation layer. The conduction of leakage current in Ta₂O₅ thin films was described by the hopping mechanism of Poole-Frenkel (PF) type.
Abstract
1. 서론
2. 실험방법
3. 결과 및 고찰
4. 결론
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