One-dimensional inorgainc semiconductor materials

1차원 무기 반도체 신 물질 재료의 연구 개발 동향

In order to overcome the problems of existing low-dimensional materials (carbon nanotubes, graphene, transition metal dichalcogenides, etc) researches on new 1D materials have been studied. In the case of LiMo₃Se₃ and Mo6S9-xIx , continuous researches have been carried out for 3D bulk synthesis and atomic scale dispersion. Recently, quantum confinement effect of LiMo₃Se₃ and bio-stability of Mo6S9-xIx have been proven and various applications have started to be studied. In addition, device application results using new 1D materials such as Sb₂Se₃ (optoelectronic devices using the property of effectively reducing exciton decay due to no dangling bond) and VS₄ (electrochemical energy storage using the space between 1-D nanostructures) have been reported very importantly. Therefore, it can be claimed that it has reached a very important time to find and synthesize new 1D materials and to report various characteristics not existing.