RF 트랜지스터의 접합 금속화 구조와 소결 온도의 영향

The Effects of the Contact Metallization Structures and Sintering Temperatures for RF Transistor

This paper is discussed about the effects of several contact metallization structure of silicide and shallow junction, to reduce the base and emitter series resistance and protect the junction spike of RF transistor. This contact metallization structures have been composed with Al-1%Si, Al/TiW/PtSi2- silicide, Al/TiN/TiSi2-silicide, Al/TiSi2-silicide, Al/TiN/Ti on the emitter and base contact of RF transistor. These contact metallization of RF transistors, with silicide contacts and poly-silicon emitter, are electrically characterized by thermal stability and DC characteristics on the sintering temperature.