전자선 리소그래피 공정 최적화를 통한 100nm 이하 초미세 패턴을 포함하는 포토 마스크 제작

Fabrication of a Photomask Containing Ultra-Fine Patterns of less than 100 nm through the Process Optimization of Electron Beam Lithography

This study aims to develop an electronic beam lithography processing technique with the best pattern resolution among top-down machining methods and apply it to manufacture nanoscale structures. When electron beams enter a substrate with highly dense patterns, a pattern distortion occurs due to the electron beam proximity effect caused by the scattering of electron beams reaching the pattern region under the substrate. A silicon nanomold of line width 50 nm was produced and the pattern uniformity was satisfied within the tolerance range through a proper correction of the electron beam proximity effect. In addition, a photo mask with ultra-fine patterns of diameter less than 100 nm was manufactured for use in the semiconductor exposure process using the correction method of the electron beam proximity effect and innovative methods involving liftoff processes.