
Review of alternative gate stack technology research during the last decade
- Byoung Hun Lee1 Paul Kirsch Husam Alshareef Prashant Majhi Rino Choi Seungchul Song Hsing Huang Tseng Raj Jammy
- 한국세라믹학회
- 세라미스트
- 제9권 제4호
- 등재여부 : KCI등재후보
- 2006.08
- 58 - 71 (14 pages)
Scaling of the gate stack has been one of the major contributors to the performance enhancement of CMOSFET devices in past technology generations The scalability of gate stack has diminished in recent years and alternative gate stack technology such as metal electrode and high-k dielectrics has been intensively studied during almost matches that of conventional SiO2-based gate dielectrics. However, many technical challenges remain to be resolved before alternative gate stacks can be introduced into mainstream technology. This paper reviews the reasearch in alternative gate stack technologies to provide insights for future reasearch.
1. Introduction to device scaling trend
2. Chronicles of alternative gate stack research
3. Recent advances in metal electrode/high-k dielectric development
4. Conclusion
Acknowledgements
References