
Joule-heating Induced Crystallization (JIC) of Amorphous Silicon Films
- Da-Yeong Ko Jae-Sang Ro
- 한국마이크로전자및패키징학회
- 마이크로전자 및 패키징학회지
- 제25권 제4호
- 등재여부 : KCI등재후보
- 2018.12
- 101 - 104 (4 pages)
An electric field was applied to a Mo conductive layer in the sandwiched structure of $glass/SiO_2/Mo/SiO_2/a-Si$ 수식 이미지 to induce Joule heating in order to generate the intense heat needed to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced via Joule heating through a solid state transformation. Blanket crystallization was accomplished within the range of millisecond, thus demonstrating the possibility of a new crystallization route for amorphous silicon films. The grain size of JIC poly-Si can be varied from few tens of nanometers to the one having the larger grain size exceeding that of excimer laser crystallized (ELC) poly-Si according to transmission electron microscopy. We report here the blanket crystallization of amorphous silicon films using the $2^{nd}$ 수식 이미지 generation glass substrate.
1. Introduction
2. Experimental
3. Results and Discussion
4. Summary
Acknowledgements
References