Effect of Localized Recrystallization Distribution on Edgebond and Underfilm Applied Wafer-level Chip-scale Package Thermal Cycling Performance

The correlation between crack propagation and localized recrystallization are compared in a series of cross section analyses on thermal cycled edgebond and underfilm material applied wafer level chip scale package (WLCSP) components with a baseline of no-material applied WLCSP components. The results show that the crack propagation distribution and recrystallization region correlation can explain potential degradation mechanisms and support the damage accumulation history in a more efficient way. Edgebond material applied components show a shift of damage accumulation to a more localized region, thus potentially accelerated the degradation during thermal cycling. Underfilm material applied components triggered more solder joints for a more wider distribution of damage accumulation resulting in a slightly improved thermal cycling performance compared to no-material applied components. Using an analysis on localized distribution of recrystallized areas inside the solder joint showed potential value as a new analytical approach.