Effect of Localized Recrystallization Distribution on Edgebond and Underfilm Applied Wafer-level Chip-scale Package Thermal Cycling Performance
- 한국마이크로전자및패키징학회
- 마이크로전자 및 패키징학회지
- 제22권 제1호
- : KCI등재후보
- 2015.03
- 27 - 34 (8 pages)
The correlation between crack propagation and localized recrystallization are compared in a series of cross section analyses on thermal cycled edgebond and underfilm material applied wafer level chip scale package (WLCSP) components with a baseline of no-material applied WLCSP components. The results show that the crack propagation distribution and recrystallization region correlation can explain potential degradation mechanisms and support the damage accumulation history in a more efficient way. Edgebond material applied components show a shift of damage accumulation to a more localized region, thus potentially accelerated the degradation during thermal cycling. Underfilm material applied components triggered more solder joints for a more wider distribution of damage accumulation resulting in a slightly improved thermal cycling performance compared to no-material applied components. Using an analysis on localized distribution of recrystallized areas inside the solder joint showed potential value as a new analytical approach.
1. Introduction
2. Experimental Procedure
3. Results and Discussion
4. Conclusions
References