Deposition of SiCxNy Thin Film as a Membrane Application
- Huh, Sung-Min Park, Chang-Mo Jinho Ahn
- 마이크로전자 및 패키징학회지
- 제8권 제1호
- 등재여부 : KCI등재후보
- 39 - 43 (5 pages)
SiCxNy film is deposited by electron cyclotron resonance plasma chemical vapor deposition system using SiH_4(5% in Ar), CH₄ and N₂. Ternary phase SiCxNy thin film deposited at the microwave power of 600 W and substrate temperature of 700 contains considerable amount of strong C-N bonds. Change in CH₄flow rate can effectively control the residual film stress, and typical surface roughness of 34.6 (rms) was obtained. Extremely high hardness (3952 Hv) and optical transmittance (95% at 633 nm) was achieved, which is suitable for a LIGA mask membrane application.
3. Results and Discussion