다층배선을 위한 구리박막 형성기술
Deposition Technology of Copper Thin Films for Multi-level Metallizations
- 한국마이크로전자및패키징학회
- 마이크로전자 및 패키징학회지
- 제9권 제3호
- : KCI등재후보
- 2002.09
- 1 - 6 (6 pages)
A low temperature process technology of copper thin films has been developed by a chemical vapor deposition technology for multi-level metallzations in ULSI fabrication. The copper films were deposited on TiN/Si substrates in helium atmosphere with the substrate temperature between 130℃ and 250℃. In order to get more reliable metallizations, effects on the post-annealing treatment to the electrical properties of the copper films have been investigated. The Cu films were annealed at the 5 ×10⁻⁶ Torr vacuum condition and the electrical resistivity and the nano-structures were measured for the Cu films. The electrical resistivity of Cu films shown to be reduced by the post-annealing. The electrical resistivity of 2.0 μ Ω·cm was obtained for the sample deposited at the substrate temperature of 180℃ after vacuum annealed at 300℃. The resistivity variations of the films was not exactly matched with the size of the nano-structures of the copper grains, but more depended on the contamination of the copper films.
1. 서론
2. 실험 방법
3. 실험결과 및 논의
감사의 글
참고문헌