KCI등재
학술저널
Effect of Microstructure on Alternating Current-induced Damage in Cu Lines
Effect of Microstructure on Alternating Current-induced Damage in Cu Lines
- 한국마이크로전자및패키징학회
- 마이크로전자 및 패키징학회지
- 제12권 제1호
- : KCI등재후보
- 2005.03
- 27 - 33 (7 pages)
The effect of microstructure on alternating current-induced damage in 200 and 300 nm thick polycrystalline sputtered Cu lines on Si substrates has been investigated. Alternating currents were used to generate temperature cycles (with ranges from 100 to 300℃) and thermal strains (with ranges from 0.14 to 0.42%) in the Cu lines at a frequency of 10 kHz. Fatigue loading caused the development of severe surface roughness that was localized within individual grains which depends severely on grain orientations.
1. Introduction
2. EXPERIMENTAL
3. Results
4. Discussions
5. Conclusion
Acknowledgement
References