Cross-Linked PVP 게이트 유기 박막트랜지스터

Organic Thin Film Transistors with Cross-Linked PVP Gates

유기 박막트랜지스터(OTFTs)제작에서 PVP-게이트 절연막의 형성과 처리가 소자성능에 미치는 영향을 조사하였다. 유기 게이트 용액의 제조에서는 polyvinyl 계열의 PVP(poly-4-vinylphenol)를 용질로, PGMEA (propylene glycol monomethyl ether acetate)를 용매로 사용하였다. 또한 열경화성 수지인 poly(melamine-co-formaldehyde)를 경화제로 사용하여 유기 절연막의 cross-link를 시도하였다. MIM 시료의 전기적 절연 특성을 측정한 결과, PVP-기반 유기 절연막은 용액의 제조에서 PGMEA에 대한 PVP와 poly (melamine-co-formaldehyde)의 농도를 증가시킬수록 낮은 누설전류 특성을 나타내었다. OTFT 제작에서는 PGMEA에 대해 PVP를 20 wt%로 섞은 PVP(20 wt%) copolymer와 5 wt%와 10 wt%의 poly(melamine-co-formaldehyde)를 경화제로 추가한 cross-linked PVP(20 wt%)를 게이트 유전 재료로 사용하였다. 제작된 트랜지스터들에서 전계효과 이동도는 5 wt % cross-linked PVP(20 wt%) 소자에서 0.31cm²/Vs로, 그리고 전류 점멸비는 10 wt% cross-linked PVP(20 wt%) 소자에서 1.92×10⁵으로 가장 높게 나타났다.

The preparation and processing of PVP-gate insulators on the device performance have been studied in the fabrication of organic thin film transistors (OTFTs). One of polyvinyl series, poly-4-vinyl phenol(PVP) was used as a solute and propyleneglycol monomethyl etheracetate(PGMEA) as a solvent in the formation of organic gate solutions. The cross-linking of organic insulators was also attempted by adding the thermosetting material, poly (melamine-co-formaldehyde) as a hardener in the compounds. From the measurements of electrical insulating characteristics of metal-insulator-metal (MIM) samples, PVP-based insulating layers showed lower leakage current according to the increase of concentration of PVP and poly (melamine-co-formaldehyde) to PGMEA in the formation of organic solutions. The PVP(20 wt%) copolymer with composition of 20 wt% PVP to PGMEA and cross-linked PVPs in which 5 wt% and 10 wt% poly (melamine-co-formaldehyde) hardeners had been additional]y mixed into PVP(20 wt%) copolymers were used as gate dielectrics in the fabrication of OTFTs, respectively. In our experiments, the maximum field effect mobility of 0.31cm²/Vs could be obtained in the 5 wt% cross-linked PVP(20 wt%) device and the highest on/off current ratio of 1.92×10⁵ in the 10 wt% cross-linked PVP(20 wt%) device.