Dependence of O₂ Plasma Treatment of Cross-Linked PVP Insulator on the Electrical Properties of Organic-Inorganic Thin Film Transistors with ZnO Channel Layer

The organic-inorganic thin film transistors (OITFTs) with ZnO channel layer and the cross-linked PVP (Poly-4-vinylphenol) gate insulator were fabricated on the patterned ITO gate/glass substrate. ZnO channel layer was deposited by using atomic layer deposition (ALD). In order to improve the electrical properties, O₂ plasma treatment onto PVP film was introduced and investigated the effect of the plasma treatments on the electrical properties of the OITFTs. The field effect mobility and sub-threshold slope (SS) values of the OITFT decreased slightly from 0.24 to 0.16 cm²/V·s and from 9.7 to 9.2 V/dec, respectively with increasing RF power from 30 to 50 Watt. The Ion/off ratio was about 10³ for all samples with O₂ plasma treatment.