상세검색
최근 검색어 전체 삭제
다국어입력
즐겨찾기0
마이크로전자 및 패키징학회지 제29권 제2호.jpg
KCI등재 학술저널

Resistive Switching Properties of N and F co-doped ZnO

One of the most promising emerging technologies for the next generation of nonvolatile memory devices based on resistive switching (RS) is the resistive random-access memory mechanism. To date, RS effects have been found in many transition metal oxides. However, no clear evidence has been reported that ZnO-based resistive transition mechanisms could be associated with strong correlation effects. Here, we investigated N, F-co-doped ZnO (NFZO), which shows bipolar RS. Conducting micro spectroscopic studies on exposed surfaces helps tracking the behavioral change in systematic electronic structural changes during low and high resistance condition of the material. The significant difference in electronic conductivity was observed to attribute to the field-induced oxygen vacancy that causes the metal-insulator Mott transition on the surface. In this study, we showed the strong correlation effects that can be explored and incorporated in the field of multifunctional oxide electrons devices.

1. Introduction

2. Experimental Section

3. Results and Discussion

4. Conclusion

References

로딩중