이산화바나듐의 금속-절연체 전이 비휘발성 조절 및 응용 연구 개발 동향

Nonvolatile Control of Metal-Insulator Transition in VO₂ and Its Applications

With the advent of the 4th industrial revolution era, there has been a high demand for high-performance electronic devices capable of collecting, storing, and calculating vast amounts of data. Vanadium dioxide (VO₂) is considered an attractive candidate for next-generation electronic devices as a prototypical strongly correlated material exhibiting a metal-insulator transition (MIT) accompanied by huge electrical resistivity changes in a few nanoseconds. The nonvolatile control of the MIT in VO₂ has recently been the subject of intensive research. In this report, we review recent advancements in the field of nonvolatile control of MIT in VO₂, using electrochemical redox reactions, inverse piezoelectric effect, and ferroelectric polarization, and their potential to develop high-performance next-generation electronic devices.