학술저널
수직형LPE에 의한 InGaAsP(1.3㎛)/InP 다층박막 결정성장
The Thin Multi-Layer Crystal Growth of InGaAsP(1.3㎛)/InP by Vertical LPE System
- 한국해양대학교 해사산업연구소
- 해사산업연구소논문집
- 제1집
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1991.05225 - 231 (7 pages)
- 7
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In this paper the results for thin multi-layer InGaAsP(1.3㎛)/InP crystal growth by vertical liquid epitexial growing furnance have been presented. The growth rates of InGaAsP layer and InP layer at cooling rate of 0.3℃/min and the growing temperature of 630℃ were obtained as 0.11㎛/min and 0.06㎛/min, respectively, by the uniform cooling with two phase solution technique.
Abstract
I. 서론
II. InGaAsP/InP 다층박막 결정성장
III. 성장결과
IV. 결론
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