Etching of Al and Cu Solids by $SiCl_4$ Molecules

Etching of Al and Cu Solids by $SiCl_4$ Molecules

The classical trajectory method, previously applied to the reactions of polyatomic molecules with fcc structured metal solids[S. C. Park, C. H. Cho, and C. H. Rhee, Bull. Kor. Chem. Soc., 11, $1(1990)]^1$ is extended to the collision energy dependence of the reaction of the Al solid by $SiCl_4$ molecules. We have calculated etching yields, degrees of anisotropy, kinetic energy distributions, and angular distributions for the reactions of the Al solid and compared with those for the reactions of the Cu solid. Over the range of collision energies we considered, the reactions of the Al soIid show higher etching yield and better anisotropy than the reactions of the Cu solid. Details of reaction mechanisms and the relevance of these calculations for the dry etching of CuAl alloy are discussed.