EFFECTS OF SUBSTRATE TEMPERATURE ON PROPERTIES OF FLUORINE CONTAINED SILICON OXIDE FILMS PREPARED BY MICROWAVE PLASMA- ENHANCED CVD

EFFECTS OF SUBSTRATE TEMPERATURE ON PROPERTIES OF FLUORINE CONTAINED SILICON OXIDE FILMS PREPARED BY MICROWAVE PLASMA- ENHANCED CVD

Silicon oxide films with high hardness and water repellency were prepared by microwave plasma-enhanced CVD using four kind of organosilicon compound-fluoro-alkyl silane mixtures as source gases. An argon gas was used as a carrier gas for fluoro-alkyl silane. The substrate temperatures during deposition were controlled by resistant heating at a constant value between 50 and $300^{\circ}C$. The hardness of the films increased, but the deposition rate and the contact angle for a water drop decreased with increasing substrate temperature. The number of methoxy groups also affected the water repellency and hardness. The deposited films became more inorganic with increasing substrate temperature because of the thermal dissociation of reactants.