Sol-Gel 법으로 제작된 PLZT 박막의 Zr/Ti 비에 따른 구조 특성에 관한 연구
A Study on the Structural Characteristics of PLZT Thin Films with Zr/Ti Ratios Prepared by Sol-Gel Method
- 한국전기전자재료학회
- Journal of the Korean Institute of Electrical and Electronic Material Engineers
- Vol.11 No.7
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1998.01535 - 540 (6 pages)
- 0
Thin films of PLZT were prepared on indium tin oxide(ITO) coated glass substrates by sol-gel process and annealed by rapid thermal annealing(RTA) at $750^{\circ}C$ for 5 minutes. The crystal structure of PLZT thin films were investigated for a different Zr mol% content. XRD results showed that the crystallographic structure was transitted from tetragonal to rhombohedral structure as Zr mol% increased. Raman spectroscopy results showed that the bands of spectra became broader as the amount of Zr mol% increased and two crystal phase coexisted at 2/55/45 PLZT film. Raman spectroscopy was useful for crystal structure analysis of PLZT thin films.
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