국가지식-학술정보
Optical properties of amorphous $Si_xC_yN_z$ ternary thin films prepared by plasma enhanced chemical vapor deposition
Optical properties of amorphous $Si_xC_yN_z$ ternary thin films prepared by plasma enhanced chemical vapor deposition
- 한국진공학회
- Journal of the Korean Vacuum Society
- Vol.7 No. Serial No.1
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1998.01190 - 196 (7 pages)
- 0
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Amorphous ternary $Si_xC_yN-z$ thin films were obtained by plasma enhanced chemical vapor deposition(PECVD) using $N_2, SiH_4 \;and \;C_2H_4$ as the reaction sources. The chemical state were characterized by x-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy(FTIR). The optical properties of the thin films were investigated by UV-visible spectrophotometer and ellipsometer, and the optical band gaps of thin films were determined from corresponding transmittance spectra following Tauc equation.
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