국가지식-학술정보
Design and Implementation of a Single Bias FET Source Mixer
Design and Implementation of a Single Bias FET Source Mixer
- 대한전자공학회
- Journal of the Korean Institute of Telematics and Electronics T
- Vol.35T No.1
-
1998.0122 - 28 (7 pages)
- 0
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A new type of FET source mixer with a single bias voltage has been presented. It is designed to operate at Vds=0 [V] with only one positive supply voltage, which makes mixer circuits simple. The proposed mixer has shown improved stability and less sensitivity to both bias and LO power compared with conventional active mixers. It also shows lower conversion loss than that of diode mixers. The minimum conversion loss measured at RF frequency of 5.6㎓ is 0.6㏈ for a LO frequency of 5.8㎓.
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