Rf-magnetron sputtering 방법으로 Li-Nb-K-O 세라믹 타겟을 사용하여 제작한 $\textrm{LiNbO}_3$박막의 제작 및 전기적 특성

Fabrication and Electric Properties of $\textrm{LiNbO}_3$ Thin Film by an Rf-magnetron Sputtering Technique Li-Nb-K-O Ceramic Target

LiNbO$_3$films were prepared by an rf-magnetron sputtering technique using sintered target containing potassium. The potassium was included to help to fabricate stoichiometric LiNbO$_3$film. Structural and electrical properties of thin films was investigated as a function of deposition condition. Optimum sputtering conditions were rf power of 100W, working pressure of 1m Torr and substrate temperature of 58$0^{\circ}C$. The thin film was grown to (012) preferred orientation. The dielectric constant of the thin film LiNbo$_3$ fabricated under optimum condition was 55 at 1MHz. Average grain size is about 200$\AA$ and roughness of the film is small enough to apply to optic devices.