국가지식-학술정보
Epitaxial Growth of BSCCO Type Structure in Atomic Layer by Layer Deposition by Ion Beam Sputtering
Epitaxial Growth of BSCCO Type Structure in Atomic Layer by Layer Deposition by Ion Beam Sputtering
- 한국전기전자재료학회
- Transactions on Electrical and Electronic Materials
- Vol.1 No.4
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2000.017 - 10 (4 pages)
- 0
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Bi$_2$Sr$_2$CuI$\_$x/(Bi(2001)) thin films are fabricated by atomic layer by layer deposition using ion beam sputtering(IBS) method. During the deposition , 10 %-ozone/oxygen mixture gas of typical 25.0$\times$10$\^$-5/ Torr is applied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less then 10 units cell and then c-axis oriented Bi(2201) is grown.
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