MOSFET Model HiSIM Based on Surface-Potential Description for Enabling Accurate RF-CMOS Design
MOSFET Model HiSIM Based on Surface-Potential Description for Enabling Accurate RF-CMOS Design

대한전자공학회
JSTS:Journal of Semiconductor Technology and Science
Vol.4 No.3
2004.01

133 - 140 (8 pages)

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외부링크

The origin of the phenomena, obstructing circuit performance in the RF operating regime, as well as their modeling will be discussed. The applied surface-potential-based modeling allows self-consistent description of all phenomena important for accurate circuit simulation, as demonstrated with the MOSFET model HiSIM.

MOSFET Model HiSIM Based on Surface-Potential Description for Enabling Accurate RF-CMOS Design
MOSFET Model HiSIM Based on Surface-Potential Description for Enabling Accurate RF-CMOS Design

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MOSFET Model HiSIM Based on Surface-Potential Description for Enabling Accurate RF-CMOS Design MOSFET Model HiSIM Based on Surface-Potential Description for Enabling Accurate RF-CMOS Design

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MOSFET Model HiSIM Based on Surface-Potential Description for Enabling Accurate RF-CMOS Design
MOSFET Model HiSIM Based on Surface-Potential Description for Enabling Accurate RF-CMOS Design

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