Preparation and Characterization of Plasma Polymerized Methyl Methacrylate Thin Films as Gate Dielectric for Organic Thin Film Transistor

Preparation and Characterization of Plasma Polymerized Methyl Methacrylate Thin Films as Gate Dielectric for Organic Thin Film Transistor

Plasma polymerized methyl methacrylate (ppMMA) thin films were deposited by plasma polymerization technique with different plasma powers and subsequently thermally treated at temperatures of 60 to $150^{\circ}C$. To find a better ppMMA preparation technique for application to organic thin film transistor (OTFT) as dielectric layer, the chemical composition, surface morphology, and electrical properties of ppMMA were investigated. The effect of ppMMA thin-film preparation conditions on the resulting thin film properties were discussed, specifically O-H site content in the pMMA, dielectric constant, leakage current density, and hysteresis.