V/비정질- <TEX>$V_{2}$</TEX> <TEX>$O_{5}$</TEX> /lV 박막소자에서의 양자화된 컨덕턴스 상태로의 문턱 스위칭

Thereshold Switching into Conductance Quantized Sttes in V/vamorphous- <TEX>$V_{2}$</TEX> <TEX>$O_{5}$</TEX>/V Thin Film Devices

This paper investigated a new type of low voltage threshold switch (LVTS). As distinguished from the many other types of electronic threshold switches, the LvTS is ; voltage controlled, occurs at low voltages (<V), involves no memory, and has long term dynamical stability under bias. Most importantly, it switches from an initially low conductance state into a succession of quantized states of higher conductance. The LVTS was ovserved in more than 100 as-deposited Vlamorphous- <TEX>$V_{2}$</TEX> <TEX>$O_{5}$</TEX>lV devices. The average low threshold voltage < <TEX>$V_{LVT}$</TEX>>=218 mV (standard deviation =24mV~kT/q, where T=300K), and was independent of the device area (x100) and amorphous oxide occurred in an ~22.angs. thick interphase of the V/amorphous- <TEX>$V_{2}$</TEX> <TEX>$O_{5}$</TEX> contacts. At <TEX>$V_{LVT}$</TEX> there was a transition from an initially low conductance (OFF) state into a succession of quantized states of higher conductance (ON). The OFF state was spatically homogeneous and dominated by tunneling into the interphase. The ON state conductances were consistent with the quantized conductances of ballistic transport through a one dimensional, quantum point contact. The temeprature dependence of <TEX>$V_{LVT}$</TEX>, and fit of the material parameters (dielectric function, barrier energy, conductivity) to the data, showed that transport in the OFF and ON states occurred in an interphase with the characteristics of, respectively, semiconducting and metallic V <TEX>$O_{2}$</TEX>. The experimental results suggest that the LVTS is likely to be observed in interphases produced by a critical event associated with an inelastic transfer of energy.rgy.y.rgy.