ECR 플라즈마에 의해 형성된 실리콘 질화막의 전기적 특성

Electrical Properties of Silicon Nitride Thin Films Formed

Ultra-thin silicon nitride films were fabricated with ECR(Electron cyclotron Resonance) nitrogen plasma at room temperature. Film thickness was about 50<TEX>$AA$</TEX>??T pressure of <TEX>${ imes}10^{-3}$</TEX> torr. 50<TEX>$AA$</TEX> fo nitride film was grown within 1 min and no appreciable growth occured thereafter. Dielectric breakdown strength and leakage current density in Al/SiN/Si structure were measured to be about 7-11 MV/cm and <TEX>${ imes}10^{-10}~5{ imes}10^{-10}A/cm^{2}$</TEX>, respectively. Observed linear relationship in 1n(J/E)-vs-E<TEX>$^{1/2}$</TEX> and no polarity-dependence of the leakage current indicated that the Poole-Frenkel emission is mainly responsible for the conduction in this nitrided silicon films.