구속 포텐셜의 전자-압전 포논 상호 작용에 따른 GaAs의 자기장 의존 특성

The Magnetic Field Dependence of the Confinement Potential due to the Interaction of Electron and Piezoelectric Phonon in GaAs Semiconducting Materials

We consider the system is subject to the linearly polarized oscillatory external field. We study the optical quantum transition Line shapes(QTLS) which show the absorption power and the quantum transition line widths(QTLW) of electron-piezoelectric phonon interacting system. We analyze the magnetic field dependence of the QTLS and the QTLW in various cases. In order to analysis the quantum transition, we compare the magnetic field dependence of the QTLW and the QTLS of two transition process, the intra-Landau level transition process and the inter-Landau level transition process.