대용량 Dynamic RAM의 Data Retention 테스트 회로 설계

Design of Data Retention Test Circuit for Large Capacity DRAMs

An efficient test method based on march test is presented to cover line leakage failures associated with bit and word lines or mega bit DRAM chips. A modified column march (Y-march) pattern is derived to improve fault coverage against the data retention failure. Time delay concept is introduced to develop a new column march test algorithm detecting various data retention failures. A built-in test circuit based on the column march pattern is designed and verified using logic simulation, confirming correct test operations.

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