A Study on Pumping Effect of Oxygen in Polysilicon Gate Etching

This article presents the experiments and considerations possible about gate etching in polysilicon when oxygen gas is added in chamber, We propose the novel study with optical emission spectroscopy in polysilicon etching. It is shown that added oxygen gases play an important role in enhencement of density in chlorine gases as a scavenger of silicon from SiCl<TEX>$\_$</TEX>x/. And a small amount of Si-O bonds are deposited and then the deposited thin film protect silicon dioxyde against reaction chlorine with silicon in SiO<TEX>$_2$</TEX>. Consequently, we can improve the selectivity of polysilicon the silicon dioxide, which is clearly explained in this model.