Seed Grain 방법에 의해 제작된 ZnO Varistro의 특성

Properties of Zn O Varistor Fabricated by Seed Grain Method

We investgated I-V cahracteristics and relationship between microstructures and electrical properties in the specimens fabricated by seed grain method for low voltage Zn O varistor. Breaksown voltage was mainly dependent on seed grain size, and could be cntrolled to 10V/mm -15V/mm by sintering temperature and time. In non-seed grain method breakdown voltage generally agreed with final grain size, but did not always agree with it by the change of barrier phase distribution in case of the method using seed grains.

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