반도체 배선용 구리 도금층의 미세조직 및 전기비저항 고찰

Effect of Microstructural Evolution on Electrical Properties of the Copper Electrodeposits for ULSI

Copper electrodeposits annealed at 80 ℃ were investigated by electrical resistance measurement,X-ray diffraction and electron backscattered diffraction analyses. The decrease of electrical resistivity hada linear relationship with the re-crystallized area. Interestingly, the texture coefficient of (200) orientationincreased as the re-crystallization occurred. Such appearance of (200) texture during annealing seemed tobe related to the residual strain in the copper electrodeposits. It is possible to evaluate the progress of graingrowth by measuring the electrical resistivity or texture coefficient in copper electrodeposits.

Copper electrodeposits annealed at 80 ℃ were investigated by electrical resistance measurement,X-ray diffraction and electron backscattered diffraction analyses. The decrease of electrical resistivity hada linear relationship with the re-crystallized area. Interestingly, the texture coefficient of (200) orientationincreased as the re-crystallization occurred. Such appearance of (200) texture during annealing seemed tobe related to the residual strain in the copper electrodeposits. It is possible to evaluate the progress of graingrowth by measuring the electrical resistivity or texture coefficient in copper electrodeposits.