Overview of the Current Status of Technical Development for a Highly Scalable, High-Speed, Non-Volatile Phase-Change Memory
Overview of the Current Status of Technical Development for a Highly Scalable, High-Speed, Non-Volatile Phase-Change Memory
- 대한전자공학회
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
- 8(1)
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2009.031 - 10 (10 pages)
- 0
The present status of technical development of a highly scalable, high-speed non-volatile PCM is overviewed. Major technical challenges are described along with solutions that are being pursued in terms of innovative device structures and fabrication technologies, new phase change materials, and new memory schemes.
The present status of technical development of a highly scalable, high-speed non-volatile PCM is overviewed. Major technical challenges are described along with solutions that are being pursued in terms of innovative device structures and fabrication technologies, new phase change materials, and new memory schemes.
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