Design of a 1～10 GHz High Gain Current Reused Low Noise Amplifier in 0.18μm CMOS Technology

Design of a 1～10 GHz High Gain Current Reused Low Noise Amplifier in 0.18μm CMOS Technology

In this paper, we propose a high gain, current reused ultra wideband (UWB) low noise amplifier (LNA) that uses TSMC 0.18 μm CMOS technology. To satisfy the wide input matching and high voltage gain requirements with low power consumption, a resistive current reused technique is utilized in the first stage. A π-type LC network is adopted in the second stage to achieve sufficient gain over the entire frequency band. The proposed UWB LNA has a voltage gain of 12.9～18.1 dB and a noise figure (NF) of 4.05～6.21 dB over the frequency band of interest (1～10 GHz). The total power consumption of the proposed UWB LNA is 10.1 mW from a 1.4 V supply voltage, and the chip area is 0.95×0.9 mm.

In this paper, we propose a high gain, current reused ultra wideband (UWB) low noise amplifier (LNA) that uses TSMC 0.18 μm CMOS technology. To satisfy the wide input matching and high voltage gain requirements with low power consumption, a resistive current reused technique is utilized in the first stage. A π-type LC network is adopted in the second stage to achieve sufficient gain over the entire frequency band. The proposed UWB LNA has a voltage gain of 12.9～18.1 dB and a noise figure (NF) of 4.05～6.21 dB over the frequency band of interest (1～10 GHz). The total power consumption of the proposed UWB LNA is 10.1 mW from a 1.4 V supply voltage, and the chip area is 0.95×0.9 mm.