4-Hexylresorcinol sensor development based on wet-chemically prepared Co3O4@Er2O3 nanorods: A practical approach

4-Hexylresorcinol sensor development based on wet-chemically prepared Co3O4@Er2O3 nanorods: A practical approach

In this approach, Co3O4@Er2O3 nanorods (NRs) were prepared by a wet-chemical method using reducing agents in alkaline medium. The resulting nanoparticles were characterized in details by UV/Vis and FT-IR spectroscopy, X-ray powder diffraction, Elemental dispersive analysis (EDS) coupled with field-emission scanning electron microscopy (FESEM). Co3O4@Er2O3NRs were deposited on a glassy carbon electrode (GCE) to give a selective sensor with a fast response toward 4-hexyl resorcinol (4-HR) in phosphate buffer phase (PBS) by electrochemical approach. The 4-HR sensor also displays good sensitivity, large linear dynamic range, lowest detection limit, and long-term stability, and enhanced electrochemical response. The calibration plot is linear over the 0.1 nM–0.01 M 4-HR concentration range. The sensitivity is ∼14.765 μAμM−1cm−2, and the detection limit is 64.29 pM (signal-to-noise ratio, at a SNR of 3). We also discuss possible future prospective uses of this doped metal oxide semiconductor nanomaterial in terms of chemical sensing.

In this approach, Co3O4@Er2O3 nanorods (NRs) were prepared by a wet-chemical method using reducing agents in alkaline medium. The resulting nanoparticles were characterized in details by UV/Vis and FT-IR spectroscopy, X-ray powder diffraction, Elemental dispersive analysis (EDS) coupled with field-emission scanning electron microscopy (FESEM). Co3O4@Er2O3NRs were deposited on a glassy carbon electrode (GCE) to give a selective sensor with a fast response toward 4-hexyl resorcinol (4-HR) in phosphate buffer phase (PBS) by electrochemical approach. The 4-HR sensor also displays good sensitivity, large linear dynamic range, lowest detection limit, and long-term stability, and enhanced electrochemical response. The calibration plot is linear over the 0.1 nM–0.01 M 4-HR concentration range. The sensitivity is ∼14.765 μAμM−1cm−2, and the detection limit is 64.29 pM (signal-to-noise ratio, at a SNR of 3). We also discuss possible future prospective uses of this doped metal oxide semiconductor nanomaterial in terms of chemical sensing.