Investigation of phase segregation in Zn1−xMgxO systems
Investigation of phase segregation in Zn1−xMgxO systems
- 한국물리학회
- Current Applied Physics
- 12(4)
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2012.071166 - 1172 (7 pages)
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DOI : http://dx.doi.org/
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The present work reports on the synthesis of the Zn1-xMgxO (x = 0, 0.02, 0.05, 0.10, 0.15 and 0.20)samples by solegel method and the investigations on their structural, morphological and optical properties. X-ray diffraction (XRD) data analysis confirms the formation of pure ZnO phase below 10% Mg doping and MgO related phases appears in 10% doped sample indicating that phase segregation of MgO starts at x ≥ 0.10 samples. The phase segregation observed through XRD analysis is also supported by results from Scanning Electron Microscopy (SEM), Raman spectroscopy and photoluminescence studies. Furthermore, the enhancement in optical band gap, with Mg doping, from 3.1 ± 0.1 eV to 3.5 ± 0.1 eV has been observed through UVeVis spectroscopic analysis. Above results have been discussed on the basis of defects level observed through Raman and photoluminscence studies.
The present work reports on the synthesis of the Zn1-xMgxO (x = 0, 0.02, 0.05, 0.10, 0.15 and 0.20)samples by solegel method and the investigations on their structural, morphological and optical properties. X-ray diffraction (XRD) data analysis confirms the formation of pure ZnO phase below 10% Mg doping and MgO related phases appears in 10% doped sample indicating that phase segregation of MgO starts at x ≥ 0.10 samples. The phase segregation observed through XRD analysis is also supported by results from Scanning Electron Microscopy (SEM), Raman spectroscopy and photoluminescence studies. Furthermore, the enhancement in optical band gap, with Mg doping, from 3.1 ± 0.1 eV to 3.5 ± 0.1 eV has been observed through UVeVis spectroscopic analysis. Above results have been discussed on the basis of defects level observed through Raman and photoluminscence studies.
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