Resistive Switching in Graphene/Graphene Oxide/ZnO Heterostructures

Resistive Switching in Graphene/Graphene Oxide/ZnO Heterostructures

Planar and vertical heterostructures based on graphene/graphene oxide/ZnO nanorods were investigatedusing optical and electrical characterizations. ZnO nanorods grown on graphene substrateby using the hydrothermal method were used for local oxidation of graphene and the formation ofself-assembled graphene/graphene oxide lateral and vertical heterostructures under an electric field. The graphene substrates were prepared by deposition of graphene oxide suspensions, followed bythermal reduction or the growth of graphene by using chemical vapor deposition. The verticalheterostructure demonstrated well-reproducible resistive switching for low offset voltage and couldbe used to fabricate high-density memory devices with low power consumption.

Planar and vertical heterostructures based on graphene/graphene oxide/ZnO nanorods were investigatedusing optical and electrical characterizations. ZnO nanorods grown on graphene substrateby using the hydrothermal method were used for local oxidation of graphene and the formation ofself-assembled graphene/graphene oxide lateral and vertical heterostructures under an electric field. The graphene substrates were prepared by deposition of graphene oxide suspensions, followed bythermal reduction or the growth of graphene by using chemical vapor deposition. The verticalheterostructure demonstrated well-reproducible resistive switching for low offset voltage and couldbe used to fabricate high-density memory devices with low power consumption.