A New Horizon for Hexagonal Boron Nitride Film

A New Horizon for Hexagonal Boron Nitride Film

Growth of hexagonal boron nitride (hBN), an isomorph of graphene/graphite, has been highlighteddue to its highly insulating and transparent properties, in parallel with highly-conductinggraphene counterpart, which could be useful for numerous applications. Nevertheless, difficultyarises from the absence of robust synthesis methods that provide large-area and high-quality hBNwith controlled number of layers. In this article, we review the recent development for the synthesisof hBN with various approaches including liquid-metal, ultra-high-vacuum chemical vapordeposition (UHVCVD), and low-pressure CVD (LPCVD) methods. Its fundamental physical andchemical properties and its potential applications are further discussed. We expect that our comprehensiveoverview of the synthesis method of hBN will provide a route to find an ultimate methodof synthesizing large-area and high-quality hBN with controlled number of layers.

Growth of hexagonal boron nitride (hBN), an isomorph of graphene/graphite, has been highlighteddue to its highly insulating and transparent properties, in parallel with highly-conductinggraphene counterpart, which could be useful for numerous applications. Nevertheless, difficultyarises from the absence of robust synthesis methods that provide large-area and high-quality hBNwith controlled number of layers. In this article, we review the recent development for the synthesisof hBN with various approaches including liquid-metal, ultra-high-vacuum chemical vapordeposition (UHVCVD), and low-pressure CVD (LPCVD) methods. Its fundamental physical andchemical properties and its potential applications are further discussed. We expect that our comprehensiveoverview of the synthesis method of hBN will provide a route to find an ultimate methodof synthesizing large-area and high-quality hBN with controlled number of layers.